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Fabrication of Atomically Flat Bi2Sr2CaCu2O8+.DELTA. Films on MgO Substrates by Pulsed Laser Deposition and a Post-annealing Process

机译：原子平面BI2SR2CAC2O8 + .Delta的制备。脉冲激光沉积和退火工艺MgO基板上的薄膜和退火过程

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Akira Ishii; Kyung Sung Yun; Shunichi Arisawa; Yoshihiko Takano; Takeshi Hatano;
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年度 2004
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2. The effects of the post-annealing time on the growth mechanism of Bi(2)Sr(2)CalCu(2)O(8-partial derivative) thin films produced on MgO (100) single crystal substrates by pulsed laser deposition (PLD) [J] . Nane O., Ozcelik B., Abukay D. CERAMICS INTERNATIONAL . 2016,第5期

机译：后退火时间对通过脉冲激光沉积（PLD）在MgO（100）单晶衬底上生产的Bi（2）Sr（2）CalCu（2）O（8-偏导数）薄膜的生长机理的影响
3. The effects of the post-annealing temperature on the growth mechanism of Bi_2Sr_2Ca_1Cu_2O_(8+?) thin films produced on MgO (100) single crystal substrates by pulsed laser deposition (PLD) [J] . O. Nane, B. Ozcelik, D. Abukay Journal of Alloys and Compounds: An Interdisciplinary Journal of Materials Science and Solid-state Chemistry and Physics . 2013,第Null期

机译：后退火温度对通过脉冲激光沉积（PLD）在MgO（100）单晶衬底上产生的Bi_2Sr_2Ca_1Cu_2O_（8+？）薄膜的生长机制的影响
4. Epitaxial Growth of Atomically Smooth (111)-Oriented MgO Films on Si (111) Substrate by Pulsed Laser Deposition [C] . Tong Lai Chen, Xiao Min Li, Xia Zhang, Thin Film Physics and Applications . 2004

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5. Femtosecond pulsed laser ablation and patterning of 3C-silicon carbide films on silicon substrates for MEMS fabrication. [D] . Dong, Yuanyuan. 2004

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7. The effects of the post-annealing time on the growth mechanism of Bi2Sr2Ca1Cu2O8+ thin films produced on MgO (100) single crystal substrates by pulsed laser deposition (PLD) [O] . Nane Onur, Özçelik Bekir, Abukay Doǧan 2016

机译：后退火时间对通过脉冲激光沉积（PLD）在MgO（100）单晶衬底上生产的Bi2Sr2Ca1Cu2O8 +薄膜的生长机理的影响

Fabrication of Atomically Flat Bi2Sr2CaCu2O8+.DELTA. Films on MgO Substrates by Pulsed Laser Deposition and a Post-annealing Process

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