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Effects of Plasticizing Additives on Performance of 193 nm Chemically Amplified Positive Resists.

机译：塑化添加剂对193nm化学扩增阳性抗蚀剂性能的影响。

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Hiroshi Yoshino; Michiya Takimoto; Hiroyoshi Tanabe;
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1. Effects of Plasticizing Additives on Performance of 193 nm Chemically Amplified Positive Resists [J] . Hiroshi Yoshino, Michiya Takimoto, Hiroyoshi Tanabe Journal of Photopolymer Science and Technology . 2000,第4期

机译：塑化添加剂对193nm化学扩增阳性抗蚀剂性能的影响
2. Lithographic Performances of Non-Chemically Amplified Resist and Chemically Amplified Resist for 193nm Top Surface Imaging Process [J] . Cho-Won Koh, Ki-Ho Baik Journal of Photopolymer Science and Technology . 2000,第4期

机译：193nm顶表面成像工艺的非化学放大抗蚀剂和化学放大抗蚀剂的光刻性能
3. Effects of photoacid generator incorporation into the polymer main chain on 193 nm chemically amplified resist behavior and lithographic performance [J] . Cheng-Tsung Lee, Clifford L. Henderson, Mingxing Wang, Journal of Vacuum Science & Technology. B, Microelectronics and Nanometer Structures . 2007,第6期

机译：光酸产生剂掺入聚合物主链中对193 nm化学放大的抗蚀剂行为和光刻性能的影响
4. 193 nm chemically amplified positive resists based on poly(norbornene-alt-maleic anhydride) with plasticizing additives [C] . Hiroshi Yoshino, TSoshiro Itani, Michiya Takimoto, Conference on advances in resist technology and processing . 2000

机译：基于聚降冰片烯-马来酸酐的193 nm化学放大正性抗蚀剂，具有增塑剂
5. Exploration of non-chemically amplified resists based on dissolution inhibitors for 193 nm lithography. [D] . Baylav, Burak. 2010

机译：探索基于溶出抑制剂的非化学放大抗蚀剂，用于193 nm光刻。
6. Effects of Graphene Nanosheets with Different Lateral Sizes as Conductive Additives on the Electrochemical Performance of LiNi0.5Co0.2Mn0.3O2 Cathode Materials for Li Ion Batteries [O] . Ting-Hao Hsu, Wei-Ren Liu 2020

机译：不同横向尺寸的石墨烯纳米片作为导电助剂对LiNi0.5Co0.2Mn0.3O2锂离子电池正极材料电化学性能的影响
7. Lithographic Performances of Non-Chemically Amplified Resist and Chemically Amplified Resist for 193nm Top Surface Imaging Process. [O] . Cha-Won Koh, Ki-Ho Baik 2000

机译：193nm顶表面成像过程的非化学放大抗蚀剂和化学放大抗蚀剂的光刻性能。
8. Amplification of 193-nm Femtosecond Seed Pulses Generated by Third-Order,Nonresonant, Difference-Frequency Mixing in Xenon [R] . Glownia, J. H., Kaschke, M., Sorokin, P. P. 1992

机译：氙气中三阶非共振差频混频产生的193nm飞秒种子脉冲的放大

Effects of Plasticizing Additives on Performance of 193 nm Chemically Amplified Positive Resists.

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