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Pattern Profile Improvement of Negative Chemical Amplification Resist by Acid Trap Reagent Soaking for KrF Excimer Laser Lithography.

机译：KRF准分子激光光刻酸阱试剂浸泡负化学扩增抗蚀剂的图案轮廓改进。

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Takashi KASUGA; Yoichi TOMO; Toshiro TSUMORI;
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年度 1991
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1. Relationship Between Sensitivities Of Chemically Amplified Resist Based On Adamantane Derivatives Upon Exposure To Arf Excimer Laser, Electron Beam, And Extreme Ultraviolet Radiation [J] . Kikuo Furukawa, Takahiro Kozawa, Shu Seki, Applied physics express . 2008,第6期

机译：Arf受激准分子激光，电子束和极紫外辐射照射下基于金刚烷衍生物的化学放大抗蚀剂的灵敏度之间的关系
2. Short pulse amplification in a KrF-laser and the petawatt excimer laser problem [J] . Molchanov AG Journal de Physique, IV: Proceedings of International Conference . 2006,第0期

机译：KrF激光器中的短脉冲放大和petawatt准分子激光问题
3. Pair generation of Ge electron centers and self-trapped hole centers in GeO2-SiO2 glasses by KrF excimer-laser irradiation [J] . Nishii J., Hosono H., Kawazoe H., Physical Review, B. Condensed Matter . 1999,第10期

机译：KrF准分子激光辐照在GeO2-SiO2玻璃中成对生成Ge电子中心和自陷空穴中心
4. Quarter-micron KrF excimer laser lithography with a chemically amplifying negative resist [C] . Akira Oikawa, Fujitsu Ltd., Kawasaki, Advances in Resist Technology and Processing IX . 1992

机译：具有化学放大负性抗蚀剂的四分之一微米KrF准分子激光光刻
5. Surface chemistry study of gallium arsenide wafers during chemically amplified resist patterning and resist studies with fluorescence. [D] . Lu, Bing. 2000

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6. Tandem Mass Spectrometry of Heparan Sulfate Negative Ions: Sulfate Loss Patterns and Chemical Modification Methods for Improvement of Product Ion Profiles [O] . Xiaofeng Shi, Yu Huang, Yang Mao, -1

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7. Insoluble surface residues studies on chemically amplified positive resist for KrF excimer laser lithography. [O] . SHIGEYASU MORI, TAKASHI FUKUSHIMA, TAKASHI SUGIHARA, 1993

机译：不溶性表面残留物研究KRF准分子激光光刻的化学扩增阳性抗蚀剂。
8. Scanning Probe Lithography. 3. Nanometer-Scale Electrochemical Patterning of Auand Organic Resists in the Absence of Intentionally Added Solvents or Electrolytes [R] . Schoer, J. K., Zamborini, F. P., Crooks, R. M. 1996

机译：扫描探针光刻。 3.在无意添加溶剂或电解质的情况下，纳米级电化学图案化auand有机抗蚀剂

Pattern Profile Improvement of Negative Chemical Amplification Resist by Acid Trap Reagent Soaking for KrF Excimer Laser Lithography.

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