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Acid catalyzed resist for KrF excimer laser lithography. (2). Polymer dissolution inhibitors.

机译：用于KRF准分子激光光刻的酸催化抗蚀剂。（2）。聚合物溶解抑制剂。

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YASUNOBU ONISHI; NAOHIKO OYASATO; HIROKAZU NIKI; RUMIKO HORIGUCHI HAYASE; YOSHIHITO KOBAYASHI; KAZUO SATO; MASATAKA MIYAMURA;
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年度 1992
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1. Microstructure control of low-resistivity tin-doped indium oxide films grown by photoreaction of nanoparticles using a KrF excimer laser at room temperature [J] . T. Tsuchiya, rnF. Yamaguchi, rnI. Morimoto, Applied Physics A: Materials Science & Processing . 2010,第4期

机译：使用KrF准分子激光在室温下通过纳米颗粒的光反应生长的低电阻锡掺杂氧化铟膜的微结构控制
2. Microstructure control of low-resistivity tin-doped indium oxide films grown by photoreaction of nanoparticles using a KrF excimer laser at room temperature [J] . T. Tsuchiya, F. Yamaguchi, I. Morimoto, Applied Physics A: Materials Science & Processing . 2010,第4期

机译：使用KrF准分子激光在室温下通过纳米颗粒的光反应生长的低电阻锡掺杂氧化铟膜的微结构控制
3. A New Positive Resist Based on Poly(4-Hydroxystyrene) for KrF Excimer Laser Lithography [J] . Kim I., Park S.J. Molecular Crystals and Liquid Crystals Science and Technology, Section A. Molecular Crystals and Liquid Crystals . 2000,第0期

机译：基于聚（4-羟基苯乙烯）的KrF准分子激光光刻正胶
4. Microswelling-free negative resists for ArF excimer laser lithography utilizing acid-catalyzed intramolecular esterification [C] . Takashi Hattori, Yuko Tsuchiya, Yoshiyuki Yokoyama, Conference on advances in resist technology and processing . 1999

机译：用于ARF准分子激光光刻利用酸催化的分子内酯化的微孔负抗性
5. Exploration of non-chemically amplified resists based on dissolution inhibitors for 193 nm lithography. [D] . Baylav, Burak. 2010

机译：探索基于溶出抑制剂的非化学放大抗蚀剂，用于193 nm光刻。
6. Preparation of periodic surface structures on doped poly(methyl metacrylate) films by irradiation with KrF excimer laser [O] . Yevgeniya Kalachyova, Oleksiy Lyutakov, Petr Slepicka, 2014

机译：用KrF准分子激光辐照在掺杂的聚甲基丙烯酸甲酯薄膜上制备周期性表面结构
7. Pattern Profile Improvement of Negative Chemical Amplification Resist by Acid Trap Reagent Soaking for KrF Excimer Laser Lithography. [O] . Takashi KASUGA, Yoichi TOMO, Toshiro TSUMORI 1991

机译：KRF准分子激光光刻酸阱试剂浸泡负化学扩增抗蚀剂的图案轮廓改进。
8. Surfaced-Imaged Silicon Polymers for 193-nm Excimer Laser Lithography.(Reannouncement with New Availability Information) [R] . Kunz, R. R., Horn, M. W., Goodman, R. B. 1992

机译：用于193纳米准分子激光光刻的表面成像硅聚合物（重新公布新的可用性信息）

Acid catalyzed resist for KrF excimer laser lithography. (2). Polymer dissolution inhibitors.

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