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Synthesis and Photovoltaic Effect of Electron-Withdrawing Units for Low Band Gap Conjugated Polymers Bearing Bi(thienylenevinylene) Side Chains

机译:轴承Bi(噻吩基乙烯乙烯乙烯)侧链的低频带隙缀合聚合物的吸电子单元的合成与光伏作用

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摘要

A novel (E)-5-(2-(5-alkylthiothiophen-2-yl)vinyl)thien-2-yl (TVT)-comprising benzo[1,2-b:4,5-b’]dithiophene (BDT) derivative (BDT-TVT) was designed and synthetized to compose two donor-acceptor (D-A) typed copolymers (PBDT-TVT-ID and PBDT-TVT-DTNT) with the electron-withdrawing unit isoindigo (ID) and naphtho[1,2-c:5,6-c′]bis[1,2,5]thiadiazole (NT), respectively. PBDT-TVT-ID and PBDT-TVT-DTNT showed good thermal stability (360 °C), an absorption spectrum from 300 nm to 760 nm and a relatively low lying energy level of Highest Occupied Molecular Orbital (EHOMO) (−5.36 to −5.45 eV), which could obtain a large open-circuit voltage (Voc) from photovoltaic devices with PBDT-TVT-ID or PBDT-TVT-DTNT. The photovoltaic devices with ITO/PFN/polymers: PC71BM/MoO3/Ag structure were assembled and exhibited a good photovoltaic performance with a power conversion efficiency (PCE) of 4.09% (PBDT-TVT-ID) and 5.44% (PBDT-TVT-DTNT), respectively. The best PCE of a PBDT-TVT-DTNT/PC71BM-based device mainly originated from its wider absorption, higher hole mobility and favorable photoactive layer morphology.
机译:一种新的(E)-5-(2-(5- alkylthiothiophen -2-基)乙烯基)噻吩-2-基(TVT)-comprising苯并[1,2-B:4,5-B']二噻吩(BDT )衍生物(BDT-TVT)的设计和synthetized组成2施主 - 受主(DA)类型的共聚物(PBDT-TVT-ID和PBDT-TVT-DTNT)与吸电子单元isoindigo(ID)和萘并[1, 2-C:5,6-C']二[1,2,5]噻二唑(NT)中。 PBDT-TVT-ID和PBDT-TVT-DTNT表现出良好的热稳定性(360℃),从300nm到760 nm和最高占据分子轨道(EHOMO)(-5.36的相对低的地势能级的吸收光谱 - 5.45电子伏特),这可能从与PBDT-TVT-ID或PBDT-TVT-DTNT光伏器件得到大开路电压(Voc)。 PC71BM /氧化钼/银结构组装并表现出与4.09%(PBDT-TVT-ID)和5.44%的功率转换效率(PCE)良好的光电性能(PBDT-TVT-:具有ITO / PFN /聚合物光伏器件DTNT),分别。一个PBDT-TVT-DTNT /基于PC71BM的设备的最好的PCE主要来源于它的更宽的吸收,更高的空穴迁移率和良好的光活性层的形态。

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