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Suppressing Buffer-Induced Current Collapse in GaN HEMTs with a Source-Connected p-GaN (SCPG): A Simulation Study

机译：用源连接的P-GaN（SCPG）抑制缓冲诱导的GaN HEMT的电流塌陷：模拟研究

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Wei Lin; Maojun Wang; Haozhe Sun; Bing Xie; Cheng P. Wen; Yilong Hao; Bo Shen;
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1. Effect of X-ray irradiation on threshold voltage of AlGaN/GaN HEMTs with p-GaN and MIS Gates [J] . Yongle Qi, Denggui Wang, Jianjun Zhou, 纳米技术与精密工程（英文） . 2020,第004期
2. Control of Buffer-Induced Current Collapse in AlGaN/GaN HEMTs Using SiN Deposition [J] . William M. Waller, Mark Gajda, Saurabh Pandey, IEEE Transactions on Electron Devices . 2017,第10期

机译：使用SiN沉积控制AlGaN / GaN HEMT中的缓冲诱导电流塌陷
3. Investigating the Current Collapse Mechanisms of p-GaN Gate HEMTs by Different Passivation Dielectrics [J] . Li Xiangdong, Posthuma Niels, Bakeroot Benoit, IEEE Transactions on Power Electronics . 2021,第5期

机译：不同钝化电介质调查P-GAN栅极HEMT的当前折叠机制
4. Bi-layer Si_xN_y passivation on AlGaN/GaN HEMTs to suppress current collapse and improve breakdown [J] . K B Lee, R T Green, P A Houston, Semiconductor science and technology . 2010,第12期

机译：在AlGaN / GaN HEMT上进行双层Si_xN_y钝化以抑制电流崩溃并改善击穿
5. Reduced Current Collapse in AIGaN/GaN HEMTs with p-GaN Layer in Gate-Drain Access Region [C] . T. Ozawa, J. T. Asubar, H. Tokuda, International Meeting for Future of Electron Devices, Kansai . 2018

机译：栅漏区中具有p-GaN层的AIGaN / GaN HEMT中的电流塌陷降低
6. Investigation of normally-off mode AlGaN/GaN MOS HEMT device utilizing gate recession and p-GaN gate structure with ald grown high k gate insulators for high power application. [D] . Ma, Jin Seock. 2016

机译：研究常关模式的AlGaN / GaN MOS HEMT器件，该器件利用栅极后退和p-GaN栅极结构以及带有醛生长的高k栅极绝缘体来实现高功率应用。
7. On the Modeling of the Donor/Acceptor Compensation Ratio in Carbon-Doped GaN to Univocally Reproduce Breakdown Voltage and Current Collapse in Lateral GaN Power HEMTs [O] . Nicolò Zagni, Alessandro Chini, Francesco Maria Puglisi, 2021

机译：关于碳掺杂GaN中供体/受体补偿比的建模在横向GaN功率Hemts中的单一再现击穿电压和电流塌陷
8. Buffer-Induced Current Collapse in GaN HEMTs on Highly Resistive Si Substrates [O] . Hareesh Chandrasekar, Michael J. Uren, Abdalla Eblabla, 2018

机译：高电阻Si基板上的GaN HEMT的缓冲诱导的电流塌陷

Suppressing Buffer-Induced Current Collapse in GaN HEMTs with a Source-Connected p-GaN (SCPG): A Simulation Study

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