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GaN and InGaN nanowires prepared by metal-assisted electroless etching: Experimental and theoretical studies

机译：GaN和IngaN纳米线通过金属辅助化学蚀刻制备：实验和理论研究

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S. Assa Aravindh; Bin Xin; Somak Mitra; Iman S. Roqan; Adel Najar;
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年度 2020
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1. Synthesis of InGaN nanowires via metal-assisted photochemical electroless etching for solar cell application [J] . Najar Adel, Jouiad Mustapha Solar Energy Materials and Solar Cells: An International Journal Devoted to Photovoltaic, Photothermal, and Photochemical Solar Energy Conversion . 2018,第期

机译：用于太阳能电池应用的金属辅助光化学化学蚀刻IngaN纳米线的合成
2. Synthesis, optical properties and residual strain effect of GaN nanowires generated via metal-assisted photochemical electroless etching [J] . Adel Najar, Muhammad Shafa, Dalaver Anjum RSC Advances . 2017,第35期

机译：金属辅助光化学化学腐蚀产生的GaN纳米线的合成，光学性能和残余应变效应
3. Nanoporous GaN-Ag Composite Materials Prepared by Metal-Assisted Electroless Etching for Direct Laser Desorption-lonization Mass Spectrometry [J] . Bei Nie, Barrett K. Duan, Paul W. Bohn ACS applied materials & interfaces . 2013,第13期

机译：金属辅助化学刻蚀直接激光解吸电离质谱法制备纳米多孔GaN-Ag复合材料
4. A NOVEL METHOD FOR SILICON NANOWIRE ARRAYED SOLAR CELLS PREPARED BY METAL-ASSISTED ELECTROLESS WET ETCHING [C] . Jonghwan Lee, Changheon Kim, Sungjae Park, European Photovoltaic Solar Energy Conference and Exhibition . 2013

机译：金属辅助无电蚀刻制备的硅纳米线阵列太阳能电池的一种新方法
5. Material characterization, patterning and adsorbate induced modulation of light emission of porous silicon produced by metal-assisted electroless etching. [D] . Chattopadhyay, Soma. 2006

机译：通过金属辅助化学蚀刻产生的多孔硅的材料表征，图案化和吸附物诱导的光调制。
6. Optical and Electrical Characteristics of Silicon Nanowires Prepared by Electroless Etching [O] . Sabar D. Hutagalung, Mohammed M. Fadhali, Raed A. Areshi, 2017

机译：化学刻蚀法制备硅纳米线的光电特性
7. Synthesis, optical properties and residual strain effect of GaN nanowires generated via metal-assisted photochemical electroless etching [O] . Najar Adel, Shafa Muhammad, Anjum Dalaver H. 2017

机译：金属辅助光化学化学刻蚀产生的GaN纳米线的合成，光学性能和残余应变效应
8. Transport Imaging for Contact-Free Measurements of Minority Carrier Diffusion in GaN, GaN/AlGaN, and GaN/InGaN Core-Shell Nanowires. [R] . A. A. Talin C. P. Ong L. Baird N. M. Haegel R. A. Cole 2011

机译：用于GaN，GaN / alGaN和GaN / InGaN核壳纳米线中少数载流子扩散的无接触测量的传输成像。

GaN and InGaN nanowires prepared by metal-assisted electroless etching: Experimental and theoretical studies

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