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Carrier transport in two-dimensional topological insulator nanoribbons in the presence of vacancy defects

机译：在存在空位缺陷的情况下二维拓扑绝缘体纳米中的载波运输

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Sabyasachi Tiwari; Maarten L Van de Put; Bart Sorée; William G Vandenberghe;
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1. Two-dimensional transport-induced linear magneto-resistance in topological insulator Bi_2Se_3 nanoribbons [J] . Tang H., Liang D., Qiu R.L.J., ACS nano . 2011,第9期

机译：二维绝缘子Bi_2Se_3纳米带中的二维输运诱导的线性磁阻
2. Ultra-low carrier concentration andsurface-dominant transport in antimony-dopedBi_2se_3 topological insulator nanoribbons [J] . seung sae Hong, Judy J. Cha, Desheng Kong, Nature Communications . 2012,第3期

机译：掺锑Bi_2se_3拓扑绝缘子纳米带的超低载流子浓度和表面主导输运
3. Ultra-low carrier concentration and surface-dominant transport in antimony-doped Bi₂Se₃ topological insulator nanoribbons [J] . Seung Sae Hong, Judy J. Cha, Desheng Kong, Nature Communications . 2012,第2016期

机译：掺锑的Bi _{2 Se _{3 拓扑绝缘子纳米带中的超低载流子浓度和表面主输运}}
4. Carrier Transport in a Two-Dimensional Topological Insulator Nanoribbon in the Presence of Vacancy Defects. [C] . Sabyasachi Tiwari, Maarten L. Van de Put, Bart Sorée, International Conference on Simulation of Semiconductor Processes and Devices . 2018

机译：存在空位缺陷的二维拓扑绝缘体纳米带中的载流子传输。
5. Electronic Transport Properties of Two-Dimensional Semiconductors and Topological Insulators with Device Applications [D] . Jin, Zhenghe. 2017

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6. Thermoelectric transport in temperature-driven two-dimensional topological insulators [O] . H. M. Dong, L. L. Li, W. Xu, -1

机译：温度驱动的二维拓扑绝缘子中的热电传输
7. Ultra-low carrier concentration and surface-dominant transport in antimony-doped Bi2Se3 topological insulator nanoribbons [O] . Hong Seung Sae, Cha Judy J., Kong Desheng, 2012

机译：掺锑的Bi2Se3拓扑绝缘子纳米带中的超低载流子浓度和表面主导输运

Carrier transport in two-dimensional topological insulator nanoribbons in the presence of vacancy defects

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