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In Situ STEM of Ag and Cu Conducting Bridge Formation through Al2O3 in Nanoscale Resistive Memory Devices

机译：通过Al2O3在纳米级电阻存储器件中的Ag和Cu导电桥梁形成的原位杆

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William A. Hubbard; E. R. White; Alexander Kerelsky; Jared J. Lodico; B. C. Regan;
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年度 2014
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1. Nature of Cu Interstitials in Al2O3 and the Implications for Filament Formation in Conductive Bridge Random Access Memory Devices [J] . Dawson J. A., Robertson J. The journal of physical chemistry, C. Nanomaterials and interfaces . 2016,第27期

机译：Al2O3中铜间隙的性质及其对导电桥随机存取存储器件中细丝形成的影响
2. Enhanced resistive switching characteristics in Al2O3 memory devices by embedded Ag nanoparticles [J] . Gao Leiwen, Li Yanhuai, Li Qin, Nanotechnology . 2017,第21期

机译：通过嵌入式AG纳米颗粒增强AL2O3存储器件中的电阻切换特性
3. Enhanced resistive switching characteristics in Al2O3 memory devices by embedded Ag nanoparticles [J] . Gao Leiwen, Li Yanhuai, Li Qin, Nanotechnology . 2017,第21期

机译：通过嵌入式AG纳米颗粒增强AL2O3存储器件中的电阻切换特性
4. Transport and microwave properties of in-situ pulsed-laser-deposited structures YBa2Cu3O7-X/YSZ/(1012)Al2O3 and YBa2Cu3O7-X/CeO2/(1012)Al2O3 [C] . Oleg A. Khymenko, State Research Ctr. Fonon, Kyiv, Combinatorial and Composition Spread Techniques in Materials and Device Development . 2000

机译：YBa2Cu3O7-X / YSZ /（1012）Al2O3和YBa2Cu3O7-X / CeO2 /（1012）Al2O3的原位脉冲激光沉积结构的输运和微波特性
5. Nanoscale Electrical and Thermal Interfaces to Resistive Memory Devices [D] . Deshmukh, Sanchit Kiran. 2020

机译：纳米级电气和热接口到电阻存储器件
6. Impact of device size and thickness of Al2O3 film on the Cu pillar and resistive switching characteristics for 3D cross-point memory application [O] . Rajeswar Panja, Sourav Roy, Debanjan Jana, 2014

机译：Al2O3膜的尺寸和厚度对Cu柱的影响以及3D交叉点存储应用的电阻开关特性
7. Nature of Cu Interstitials in Al2O3 and the Implications for Filament Formation in Conductive Bridge Random Access Memory Devices [O] . Dawson JA, Robertson John 2016

机译：Al2O3中铜间隙的性质及其对导电桥随机存取存储器件中细丝形成的影响

In Situ STEM of Ag and Cu Conducting Bridge Formation through Al2O3 in Nanoscale Resistive Memory Devices

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