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Reliability Study of High-Temperature-Resistant Mounting Structure Using High Purity Aluminum for Power Devices

机译：高纯铝电气装置高纯铝的可靠性研究

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Masanori Yamagiwa; Qiang Yu; Masato Fujita; Masanori Shinohara; Yoshinori Murakami;
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年度 2009
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1. A reliability study of relay suitable for surface mount process using high-temperature-resistant plastics [J] . Ohba M., Kuzukawa K. IEEE Transactions on Components, Hybrids, and Manufacturing Technology . 1988,第1期

机译：适用于使用耐高温塑料的表面贴装工艺的继电器的可靠性研究
2. Effects of Film Orientation on Power Consumption, Thermal Stability, and Reliability of Aluminum Nitride Resistive Random Access Memory Devices [J] . Lin Chun-Cheng, Liou Huei-Yu, Hung Pei-Hao, IEEE Transactions on Electron Devices . 2019,第11期

机译：薄膜取向对氮化铝电阻随机存取存储器件功耗，热稳定性和可靠性的影响
3. Reliability Concern on Extended E-SOA of SOI Power Devices With P-Sink Structures [J] . Qian Q., Liu S., Wan W., Device and Materials Reliability, IEEE Transactions on . 2013,第1期

机译：具有P型沉结构的SOI功率器件的扩展E-SOA的可靠性
4. Reliability Study of Mounting Structure for High Temperature Power Semiconductor Device Chip using High Purity Aluminum [C] . Masanori Yamagiwa, Qiang Yu, Masato Fujita, IEEE Intersociety Conference on Thermal and Thermomechanical Phenomena in Electronic Systems . 2008

机译：高纯铝高温功率半导体器件芯片安装结构的可靠性研究
5. STRAIN RATE AND TEMPERATURE EFFECTS DURING DYNAMIC DEFORMATION OF POLYCRYSTALLINE AND MONOCRYSTALLINE HIGH PURITY ALUMINUM INCLUDING TEM STUDIES (PLASTICITY, MICROSTRUCTURE, STRAIN RATE, TEMPERATURE EFFECTS, HISTORY). [D] . MORRONE, AUGUSTO ALESSIO. 1986

机译：多晶态和单晶态高纯铝动态变形过程中的应变率和温度效应，包括TEM研究（塑性，微观结构，应变率，温度效应，历史）。
6. Microwave Study of Field-Effect Devices Based on Graphene/Aluminum Nitride/Graphene Structures [O] . Mohammad Adabi, Johannes Lischner, Stephen M. Hanham, -1

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7. Microwave study of field-effect devices based on graphene/aluminum nitride/graphene structures [O] . Adabi, M, Lischner, J, Hanham, SM, 2017

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Reliability Study of High-Temperature-Resistant Mounting Structure Using High Purity Aluminum for Power Devices

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