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High hole mobility (≥500 cm2 V−1 s−1) polycrystalline Ge films on GeO2-coated glass and plastic substrates

机译：Geo2涂层玻璃和塑料基材上的高空穴迁移率（≥500cm2V-1S-1）多晶GE薄膜

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Toshifumi Imajo; Kenta Moto; Ryota Yoshimine; Takashi Suemasu; Kaoru Toko;
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1. High hole mobility (≥500 cm~2V~(-1) s~(-1)) polycrystalline Ge films on GeO_2-coated glass and plastic substrates [J] . Imajo Toshifumi, Moto Kenta, Yoshimine Ryota, Applied physics express . 2019,第1期

机译：GeO_2涂层玻璃和塑料基板上的高空穴迁移率（≥500cm〜2V〜（-1）s〜（-1））多晶Ge膜
2. Film Texture, Hole Transport and Field-Effect Mobility in Polycrystalline SnO Thin Films on Glass [J] . Po-Ching Hsu, Chung-Chih Wu, Hidenori Hiramatsu ECS Journal of Solid State Science and Technology . 2014,第9期

机译：玻璃上多晶SnO薄膜的膜织构，空穴传输和场效应迁移率
3. Effect of post annealing on hole mobility of pseudo-single-crystalline germanium films on glass substrates [J] . Kasahara Kenji, Higashi Hidenori, Nakano Mario, Materials science in semiconductor processing . 2017,第期

机译：术后退火对玻璃基材伪晶锗膜孔迁移率的影响
4. Fabrication of Crystallized Si Film Deposited on a Polycrystalline YSZ Film/Glass Substrate at 500°C [C] . Susumu Horita, Keisuke Kanazawa, Kensuke Nishioka, Materials Research Society Symposium on Amorphous and Polycrystalline Thin-Film Silicon Science and Technology . 2007

机译：在500℃下沉积在多晶YSZ薄膜/玻璃基板上的结晶Si膜的制造
5. DRIFT MOBILITIES OF ELECTRONS AND HOLES AND SPACE-CHARGE-LIMITED CURRENTSIN AMORPHOUS SELENIUM FILMS. [D] . HARTKE, JEROME LUTHER. 1961

机译：非晶硒膜中电子和孔的漂移能力和空间电荷受限的电流。
6. Glassy state molecular mobility and its relationship to the physico-mechanical properties of plasticized hydroxypropyl methylcellulose (HPMC) films [O] . Samuel K. Owusu-Ware, Joshua S. Boateng, Babur Z. Chowdhry, 2019

机译：玻态分子迁移率及其与增塑羟丙基甲基纤维素（HPMC）膜的物理力学性能的关系
7. Preparation of polycrystalline VO2 films on glass and TiO2/glass substrates by means of excimer laser assisted metal organic deposition [O] . Masami NISHIKAWA, Tomohiko NAKAJIMA, Takaaki MANABE, 2010

机译：通过准分子激光辅助金属有机沉积制备玻璃和TiO2 /玻璃基板上的多晶VO2薄膜
8. Stress-Enhanced Carrier Mobility in Zone Melting Recrystallized Polycrystalline Si Films on SiO2-Coated Substrates. [R] . Tsaur, B. Y., Geis, M. W., Fan, J. C. 1981

机译：siO2涂层衬底上区域熔化重结晶多晶硅薄膜的应力增强载流子迁移率。

High hole mobility (≥500 cm2 V−1 s−1) polycrystalline Ge films on GeO2-coated glass and plastic substrates

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