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Enhanced photoresponsivity and hole mobility of MoTe2 phototransistors by using an Al2O3 high-κ gate dielectric

机译：通过使用Al2O3高κ栅极电介质增强了Mote2光电晶体管的光响应和空穴迁移率

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Wenjie Chen; Renrong Liang; Jing Wang; Shuqin Zhang; Jun Xu;
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1. High-κ oxide nanoribbons as gate dielectrics for high mobility top-gated graphene transistors [J] . Lei Liao, Jingwei Bai, Yongquan Qu, Proceedings of the National Academy of Sciences of the United States of America . 2010,第15期

机译：高κ氧化物纳米带作为高迁移率顶栅石墨烯晶体管的栅极电介质
2. Low-voltage back-gated atmospheric pressure chemical vapor deposition based graphene-striped channel transistor with high-κ dielectric showing room-temperature mobility >11 000 cm~2/V·s [J] . Smith, C., Qaisi, R., Liu, Z., ACS nano . 2013,第7期

机译：低压背压大气压化学气相沉积石墨烯条纹沟道晶体管，具有高κ介电常数，室温迁移率> 11000 cm〜2 / V·s
3. High mobility strained Ge PMOSFETs with high-κ gate dielectric and metal gate on Si substrate [J] . J.P. Donnelly, D.Q. Kelly, D.I. Garcia-Gutierrez, Electronics Letters . 2008,第3期

机译：高迁移率应变Ge PMOSFET，在Si衬底上具有高κ栅极电介质和金属栅极
4. Interface properties study on SiC MOS with high-κ Al2O3 gate dielectric [C] . Lin Liang, Wei Li, Sichao Li, IEEE International Conference on Solid-State and Integrated Circuit Technology . 2016

机译：高κAl2O3栅介质的SiC MOS的界面特性研究
5. Electron mobility calculations in silicon, germanium, and III -V substrates with high-κ gate dielectrics [D] . O'Regan, Terrance P. 2008

机译：具有高κ栅极电介质的硅，锗和III -V衬底中的电子迁移率计算
6. High-κ oxide nanoribbons as gate dielectrics for high mobility top-gated graphene transistors [O] . Lei Liao, Jingwei Bai, Yongquan Qu, 2010

机译：高κ氧化物纳米带作为高迁移率顶栅石墨烯晶体管的栅极电介质
7. High-κ oxide nanoribbons as gate dielectrics for high mobility top-gated graphene transistors [O] . Liao, Lei, Bai, Jingwei, Qu, Yongquan, 2010

机译：高κ氧化物纳米带作为高迁移率顶栅石墨烯晶体管的栅极电介质

Enhanced photoresponsivity and hole mobility of MoTe2 phototransistors by using an Al2O3 high-κ gate dielectric

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