CdTe thin films were grown on different substrates: BaF₂ (111), polished Si (100), SiO₂, bulk CdTe (110) and HgxCd₁₋xTe layers by hot wall epitaxy (HWE). Chosen temperature parame-ters and technological process of thin film fabrication provided the growth rate of about 0.03 mm/min. The current-voltage characteristics and transmission spectra were measured. X-ray diffrac-tion data (XRD) measurements were carried out as well.
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机译：CdTe薄膜通过热壁外延（HWE）在不同的衬底上生长：BaF 2（111），抛光的Si（100），SiO 2，块状CdTe（110）和HgxCd₁₋xTe层。选定的温度参数和薄膜制造的工艺过程提供了约0.03 mm / min的生长速率。测量了电流-电压特性和透射光谱。还进行了X射线衍射数据（XRD）的测量。
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