Some aspects of thermal resistance measurement technique for IMPATT and light-emitting diodes

摘要

Some aspects of measuring the thermal resistance to a constant heat flow at audp-n junction–package region in IMPATT and light-emitting diodes are considered. Weudpropose a method of studying the thermal resistance of high-power light-emitting diodes.udThis method makes it possible to increase accuracy of measuring the thermal resistanceudby determining the temperature at a linear section of the voltage−temperature curve. Audpossibility to measure the thermal resistance of IMPATT diodes by using the pulse I-Vudcurves is shown. This enables one to simplify calculations and increase accuracy ofudmeasuring the thermal resistance.