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Thin-film heterostructures based on conducting polymers and organic semiconductors

机译:基于导电聚合物和有机半导体的薄膜异质结构

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摘要

We have carried out the experimental verification of a possibility to produceudorganic heterostructures by using films of organic semiconductors (OS) which areudphotosensitive in a wide spectral region, absorb light, and generate charge carriers in theudregion of transparency of films of conducting polymers – electrochemically synthesizedudpolyaniline (PAN) and poly-3,4-ethylenedioxythiophene (PEDOT) stabilized byudpolystyrenesulfone acid (PSS). As components for the fabrication of theseudheterostuctures, we chose photosensitive organic semiconductors of the n-type, N,N`-uddimethyl-3,4,9,10-perylenetetracarboxydiimide (МРР), and of the р-type, pentaceneud(Pn), which were thermally sprayed on thin layers of PAN and PEDOT. Theudphotovoltage of heterostuctures produced at the temperature of substrates 370 K isudseveral times greater than that of components, reaches its maximum in the region ofudstrong light absorption in OS layers, but is one order less in the region of strongudabsorption in polymers. This testifies to the appearance of an internal electric field nearudthe polymer/OS boundary which enhances the efficiency of separation of photogeneratedudcharge carriers, whereas the efficiency inherent to photogeneration of carriers in theudlayers with PAN and PEDOT-PSS is insufficient yet.
机译:我们已经进行了实验验证,证明了可能通过使用有机半导体(OS)薄膜产生 udorganic异质结构的可能性,该薄膜在宽光谱范围内 udphoto感光,吸收光并在薄膜的 udud透明区域中产生电荷载流子。导电聚合物–电化学合成的 udpolyaniline(PAN)和由 udpoly苯乙烯砜酸(PSS)稳定的聚3,4-乙撑二氧噻吩(PEDOT)。作为制造这些异相结构的组件,我们选择了n型光敏有机半导体,N,N`- uddimethyl-3,4,9,10-per四羧基二酰亚胺(МРР),以及р型并五苯 ud(Pn),将其热喷涂在PAN和PEDOT的薄层上。在基材370 K的温度下产生的异质结构的 udphoto电压是组件的 uds数倍,在OS层的 udstrong光吸收的区域达到其最大值,而在强 udabsorption的区域则少一个数量级。在聚合物中。这证明了在聚合物/ OS边界附近的内部电场的出现,这增强了光生电荷载体分离的效率,而用PAN和PEDOT-PSS在双层中光生载体固有的效率还不够。 。

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