Periodic subsurface structures in GaAs formed by spatially modulated nanosecond pulse laser irradiation

摘要

We used the method of nets to calculate the thermoelastic stresses on the GaAsudsurface caused by a non-destructive nanosecond pulse laser irradiation (λ = 0.532 µm)udwith diffraction spatial intensity modulation from a shield with rectangular cut. Theudstructure of irradiated subsurface layers of samples was studied by the AFM method. Audperiodic islet structure formed in the process of diffusive redistribution of defects wasudrevealed by the level-by-level chemical etching.