Peculiarities of the influence of high- and low-energy proton and electron irradiations on the characteristics of silicon solar cells

摘要

Experimental data on degradation of photovoltaic and photoenergeticudcharacteristics of silicon solar cells exposed by high-energy electrons and protons as welludas low-energy protons have been obtained. The previously proposed theoretical modeludthat can describe degradation of the solar cell characteristics under the influence ofudirradiation, including that creating spatially inhomogeneous defect distribution over theudstructure thickness, has been experimentally confirmed. It was ascertained that in theudcases of 1 MeV energy electron and 20 MeV energy proton irradiations, when there is audrelatively homogeneous defect distribution over the silicon solar cell thickness, its shortcircuitudcurrent degrades faster than the open-circuit voltage. On the contrary, in the caseudof low-energy 0.1 MeV proton irradiation, when the distribution of defects is spatiallyudinhomogeneous, the open-circuit voltage degrades faster than the short-circuit current.