Here we report the reflection coefficient and optical conductivity of galliumudnitride (GaN). The reflection coefficient obtained in the photon energy range 2–10 eVudshows five distinct peaks at photon energies 3.5, 5.0, 7.0, 8.0, and 9.0 eV. It wasudobserved that the reflection coefficient has its highest value 0.54 at the photon energyud7.0 eV. Variation of the real part of optical conductivity with photon energy shows fiveuddistinct peaks at photon energies 3.5, 5.0, 7.0, 8.0, and 9.0 eV. It was observed that theudreal part of optical conductivity has the maximum value 5.75·10¹⁵ for the photon energyud7.0 eV, and it decreases until coming to zero at 10.0 eV. The peaks indicate regions ofuddeeper penetration of electromagnetic waves, and they also show high conductivity. Theudimaginary part of optical conductivity obtained for GaN in the photon energy range 2.0udto 10.0 eV shows five distinct peaks at photon energies 3.5, 5.0, 7.0, 8.0, and 9.0 eV. Itudwas observed that it has a minimum value of –6.46·10¹⁵ for the photon energy 8.0 eV anduda maximum value at –1.2·10¹⁵. This implies that there is a reduction in conductivity ofudGaN, and likewise, reduction in the propagation of electromagnetic waves in this region
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