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Local heating method for growth of aligned carbon nanotubes at low ambient temperature

机译:在低环境温度下局部生长取向碳纳米管的局部加热方法

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摘要

We use a highly localised resistive heating technique to grow vertically aligned multiwalled nanotubeudfilms and aligned single-walled nanotubes on substrates with an average temperature of less than 100°C. Theudtemperature at the catalyst can easily be as high as 1000 °C but an extremely high temperature gradientudensures that the surrounding chip is held at much lower temperatures, even as close as 1μm away from theudlocal heater. We demonstrate the influence of temperature on the height of multi-walled nanotube films,udillustrate the feasibility of sequential growth of single-walled nanotubes by switching between local heatersudand also show that nanotubes can be grown over temperature sensitive materials such as resist polymer.
机译:我们使用高度局部的电阻加热技术在平均温度低于100°C的衬底上生长垂直排列的多壁纳米管 udfilms和排列的单壁纳米管。催化剂处的高温可能很容易高达1000°C,但极高的温度梯度确保周围的芯片保持在更低的温度下,即使离局部加热器最接近1μm。我们证明了温度对多壁纳米管薄膜高度的影响, ud说明了通过在局部加热器之间切换来顺序生长单壁纳米管的可行性 ud,并且还表明了纳米管可以在对温度敏感的材料(例如抗蚀剂聚合物)上生长。

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