Effect of pulsing magnetic field on radiative recombination spectra of GaP and InP single crystals

摘要

We present the results of investigations concerning the effect caused by weakudmagnetic field (B = 15 mT and 60 mT) treatment on GaP and InP single crystals ofudimpurity-defect composition. This effect was found when studying the radiativeudrecombination (luminescence) spectra within the range 0.6 to 2.5 µm at 77 K. It wasudobtained that a short-term influence of field initiates long-term changes in the intensity ofudradiative recombination inherent to centers of different nature. General regularities inudbehavior of the luminescence intensity have been found. This intensity changes with theudconcentration of recombination centers. A possible mechanism of observedudtransformations has been discussed.