Photoconductivity in macroporous silicon with regular structure of macropores

摘要

The effects of the increase of photoconductivity in periodic macroporousudsilicon structures depending on the size and period of cylindrical macropores areudinvestigated. It is obtained that the ratio of macroporous silicon photoconductivity toudbulk silicon photoconductivity achieves a maximum at the distance between macroporesudequal to two thicknesses of the Schottky layer, which corresponds to the experimentaluddata. The increase of photoconductivity is due to both the large total surface area ofudmacropores and the existence of Schottky layers in the near-surface region of cylindricaludmacropores.