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Temperature Dependent Behavior of the Optical Gain and Electroabsorption Modulation Properties of an InAs/GaAs Quantum Dot Epistructure

机译：INAS / GaAs量子点集理的光学增益和电吸收调制特性的温度依赖性行为

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Emmanuel D. Le Boulbar; Nicolas Abadia; Lydia Jarvis; David Hayes; Samuel Shutts; Zhibo Li; Mingchu Tang; Huiyun Liu; Alireza Samani; Peter M. Smowton;
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1. Morphological and temperature-dependent optical properties of InAs quantum dots on GaAs nanowires with different InAs coverage [J] . Yan Xin, Zhang Xia, Ren Xiaomin, Applied Physics Letters . 2013,第17期

机译：具有不同InAs覆盖率的GaAs纳米线上InAs量子点的形貌和温度相关光学特性
2. Morphological and temperature-dependent optical properties of InAs quantum dots on GaAs nanowires with different InAs coverage [J] . Xin Yan, Xia Zhang, Xiaomin Ren, Applied Physics Letters . 2013,第17期

机译：具有不同InAs覆盖率的GaAs纳米线上InAs量子点的形貌和温度相关光学特性
3. The temperature dependence of electrical and optical properties in InAs/GaAs and GaAs/InAs/AlAs self-assembled quantum dots [J] . Chiquito AJ, de Souza MG, Camps I, Semiconductor science and technology . 2006,第7期

机译：InAs / GaAs和GaAs / InAs / AlAs自组装量子点中电学和光学性质的温度依赖性
4. Temperature Dependent Behavior of the Optical Gain and Electroabsorption Modulation Properties of an InAs/GaAs Quantum Dot Epistructure [C] . Emmanuel D. Le Boulbar, Lydia Jarvis, David Hayes, International Conference on Transparent Optical Networks . 2019

机译：InAs / GaAs量子点外延结构的光学增益随温度变化的行为和电吸收调制特性
5. Temperature dependent optical properties of silicon quantum dot/polymer nanocomposites. [D] . Van Sickle, Austin Reed. 2012

机译：硅量子点/聚合物纳米复合材料的温度依赖性光学性质。
6. Theoretical study of strain-dependent optical absorption in a doped self-assembled InAs/InGaAs/GaAs/AlGaAs quantum dot [O] . Tarek A Ameen, Hesameddin Ilatikhameneh, Archana Tankasala, 2018

机译：掺杂的自组装InAs / InGaAs / GaAs / AlGaAs量子点中应变相关的光吸收的理论研究
7. Temperature-Dependent Optical Properties and Bandgap Characteristics of InAs/GaAs Sub-monolayer Quantum Dot Investigated by Photoreflectance Spectroscopy [O] . Minseak Kim, Sang Jo Lee, Hyun Jun Jo, 2019

机译：通过光反射光谱研究的温度依赖性光学性能和带隙特性/ GaAs亚单层量子点的含量

Temperature Dependent Behavior of the Optical Gain and Electroabsorption Modulation Properties of an InAs/GaAs Quantum Dot Epistructure

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