Determination of refractive index dispersion and thickness of thin antireflection films TiO₂ and Si₃N₄ on surfaces of silicon photoelectric converters

摘要

Offered in this work is the method to determine the thickness and refractiveudindex dispersion of thin antireflection films on absorbing substrates by using a spectraluddependence of reflectivity at normal light incidence. The method has been applied touddetermine the above characteristics of thin antireflection films TiO₂ and Si₃N₄ onudsurfaces of silicon photoelectric converters. The films were prepared by chemicaludsedimentation. The obtained experimental data have been treated using a computerudprogram to deduce dispersion curves and thickness values. The results have beenudinterpreted.