Electroluminescence and photoluminescence of Ge‐implanted Si/SiO2/Si structures

摘要

Electroluminescent devices were fabricated in SiO_2 films containing Ge nanocrystals formed by ion implantation and precipitation during annealing at 900 °C, and the visible room‐temperature electroluminescence and photoluminescence spectra were found to be broadly similar. The electroluminescent devices have an onset for emission in reverse bias of approximately −10 V, suggesting that the mechanism for carrier excitation may be an avalanche breakdown caused by injection of hot carriers into the oxide. The electroluminescent emission was stable for periods exceeding 6 h.