Modeling of photons trapping effect on the performance of HPT-LED Optoelectronic Integrated Device (OEID)

摘要

The effect of photons trapped at the LED side due to total internal reflectionudon the transient behavior of an Optoelectronic Integrated Device (OEID) is considered inudthis paper. The device is composed of a Heterojunction Phototransistor (HPT) and audLight Emitting Diode (LED). The expressions describing the transient response of theudoutput photons flux, the rise time, and the output derivative are derived. The effect of theudvarious device parameters on the transient response is outlined. The results show that theudtransient response of these types of devices is strongly dependent on the ratio of theseudtrapped photons in the LED part. Also the device under consideration can be changedudfrom switching mode to the amplification mode, if the fractions of trapped photonsudexceed a specified value. This type of the model can be exploited as an optical amplifier,udoptical switching device and other applications.