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Growth and characterization of thin epitaxial Co3O4(111) films

机译:生长和薄外延 < MML:MROW> 3 0 4 1 1 1

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摘要

The growth and characterization of epitaxial Co3O4(111) films grown by oxygenplasma-assisted molecular beam epitaxy on single crystalline a-Al2O3(0001) isreported. The Co3O4(111) grows single crystalline with the epitaxial relationCo3O4(111)[-12-1]||a-Al2O3(0001)[10-10], as determined from in situ electrondiffraction. Film stoichiometry is confirmed by x-ray photoelectronspectroscopy, while ex situ x-ray diffraction measurements show that the Co3O4films are fully relaxed. Post-growth annealing induces significantmodifications in the film morphology, including a sharper Co3O4/a-Al2O3interface and improved surface crystallinity, as shown by x-ray reflectometry,atomic force microscopy and electron diffraction measurements. Despite beingpolar, the surface of both as-grown and annealed Co3O4(111) films are (1 * 1),which can be explained in terms of inversion in the surface spinel structure.
机译:在单晶A-Al2O3(0001)上的含氧辅助分子束外延生长的外延CO3O4(111)膜的增长和表征探测。根据原位电解中确定,Co3O4(111)与外延关系产生单结晶,其与外延关系有关CO 3 O 4(111)[ - 12-1] [10-10]。薄膜化学计量通过X射线光电分子分光镜确认,而EX原位X射线衍射测量表明CO3O4FILMS完全松弛。后生长后退火诱导薄膜形态的显着性分布,包括X射线反射测量,原子力显微镜和电子衍射测量所示的锐利CO3O4 / A-Al2O3接口和改进的表面结晶度。尽管是挥杆,但生长和退火的CO 3 O 4(111)膜的表面(1 * 1),可以在表面尖晶石结构中的反转方面解释。

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