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High quality relaxed germanium layers grown on (110) and (111) silicon substrates with reduced stacking fault formation

机译：高品质轻松的锗层（110）和（111）硅基板，具有减少的堆叠故障形成

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Van Huy Nguyen; A. Dobbie; M. Myronov; D. R. Leadley;
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1. High quality relaxed germanium layers grown on (110) and (111) silicon substrates with reduced stacking fault formation [J] . Van Huy Nguyen, A. Dobbie M. Myronov, D. R. Leadley Journal of Applied Physics . 2013,第15期

机译：在（110）和（111）硅基板上生长的高质量弛豫锗层，减少了堆叠缺陷的形成
2. Epitaxial growth of relaxed germanium layers by reduced pressure chemical vapour deposition on (110) and (111) silicon substrates [J] . Van Huy Nguyen, A. Dobbie, M. Myronov, Thin Solid Films . 2012,第8期

机译：通过在（110）和（111）硅基板上进行减压化学气相沉积来外延生长锗层
3. Formation of high-quality Ge_(1-x)Sn_x layer on Ge(110) substrate with strain-induced confinement of stacking faults at Ge_(1-x)Sn_x/Ge interfaces [J] . Takanori Asano, Noriyuki Taoka, Osamu Nakatsuka, _Applied Physics Express . 2014,第6期

机译：在Ge（110）衬底上形成高质量的Ge_（1-x）Sn_x层，并在Ge_（1-x）Sn_x / Ge界面处以应变诱导的方式限制了层错
4. Understanding the Role of the Low Temperature Seed Layer in the Growth of Low Defect Relaxed Germanium Layers on (111) Silicon by Reduced Pressure CVD [C] . Nguyen Van Huy, Dobbie A., Myronov M., Silicon-Germanium Technology and Device Meeting (ISTDM), 2012 International . 2012

机译：通过减压CVD了解低温晶种层在（111）硅上低缺陷弛豫锗层生长中的作用
5. Growth of Iridium on Germanium(111) and Germanium(110) and Growth of Silver on Germanium(111), Germanium(110), and Germanium(001) Studied by Low Energy Electron Microscopy and Scanning Tunneling Microscopy [D] . Mullet, Cory Hostetler 2012

机译：低能电子显微镜和扫描隧道显微镜研究锗在锗（111）和锗（110）上的生长以及锗（111），锗（110）和锗（001）上的银的生长
6. Characterization of dislocations in germanium layers grown on (011)- and (111)-oriented silicon by coplanar and noncoplanar X-ray diffraction [O] . Andrei Benediktovitch, Alexei Zhylik, Tatjana Ulyanenkova, -1

机译：通过共面和非共面X射线衍射表征在（011）和（111）取向硅上生长的锗层中的位错
7. Structural properties of relaxed thin film germanium layers grown by low temperature RF-PECVD epitaxy on Si and Ge (100) substrates [O] . Cariou Romain, Ruggeri Rosa, Tan Xi, 2014

机译：Si和Ge（100）衬底上通过低温RF-PECVD外延生长的弛豫薄膜锗层的结构特性
8. High Quality AIN And GaN Epilayers Grown On (00-1) Sapphire, (100), and (111)Silicon Substrates [R] . Kung, P., Saxler, A., Zhang, X., 1995

机译：在（00-1）蓝宝石，（100）和（111）硅衬底上生长的高质量aIN和GaN外延层

High quality relaxed germanium layers grown on (110) and (111) silicon substrates with reduced stacking fault formation

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