Pyroelectric response of inhomogeneous ferroelectric-semiconductor films

摘要

We have modified Landau-Khalatnikov approach and shown that the pyroelectric response of inhomogeneousudferroelectric-semiconductor films can be described by using six coupled equations for the average displacement,udits mean-square fluctuation and correlation with charge defects density fluctuations, average pyroelectricudcoefficient, its fluctuation and correlation with density fluctuations of charged defects.udCoupled equations demonstrate the inhomogeneous reversal of pyroelectric response in contrast to the equationsudof Landau-Khalatnikov type, which describe the homogeneous reversal with sharp pyroelectric coefficientudpeaks near the thermodynamic coercive field values. Our approach explains pyroelectric loops observed inudPb(Zr,Ti)O₃ film.