Thermodynamic analysis of processes creating the defects in cadmium telluride crystals under conditions of high-temperature annealing

摘要

The defective structure of specifically undoped cadmium telluride crystals wasudresearched using the theory of thermodynamic potentials. The calculated concentration ofudpoint defects and free charge carriers in the CdTe crystals, depending on technologicaludfactors of two-temperature annealing (annealing temperature T and partial pressure ofudcadmium PCd vapor). The dominant types of defects that determine the basic propertiesudof the material n- and p-type conduction were determined.