Interface features of SiO₂/SiC heterostructures according to methods for producing the SiO₂ thin films

摘要

In this work, we studied comparative characteristics of the SiO₂/SiCudheterostructures. The following two techniques were used for SiO₂ formation: thermaludoxidation in water vapor (i) and oxidation in solution (ii). According to experimentaludresults obtained from optical absorption and photoluminescence spectra as well as fromudmeasurements of internal mechanical stresses, one can conclude that the thin SiO₂ filmsudprepared using the technique (ii) possess SiO₂/SiC interface with a less number ofuddefective states than that for SiO₂ films prepared using the technique (i).