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The impact of dislocations on AlGaN/GaN Schottky diodes and on gate failure of high electron mobility transistors

机译：脱位对AlGaN / GaN肖特基二极管的影响以及高电子迁移率晶体管的栅极故障

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Sven Besendörfer; Elke Meissner; Farid Medjdoub; Joff Derluyn; Jochen Friedrich; Tobias Erlbacher;
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1. X-ray Photoelectron Spectroscopy Study of the Origin of the Improved Device Performance by a Thin Al Layer Insertion between AlGaN and Schottky Gate on the AlGaN/GaN High-Electron-Mobility Transistor [J] . Takuma Nanjo, Kazumasa Kawase, Muneyoshi Suita, Japanese Journal of Applied Physics. Part 2, Letters & Express Letters . 2007,第20a24期

机译：X射线光电子能谱研究通过在AlGaN / GaN高电子迁移率晶体管上的AlGaN和肖特基栅极之间插入薄Al层来改善器件性能的起源
2. Effects of a thin Al layer insertion between AlGaN and Schottky gate on the AlGaN/GaN high electron mobility transistor characteristics [J] . Takuma Nanjo, Toshiyuki Oishi, Muneyoshi Suita, Applied Physics Letters . 2006,第4期

机译：在AlGaN和肖特基栅极之间插入薄Al层对AlGaN / GaN高电子迁移率晶体管特性的影响
3. Investigation of gate-diode degradation in normally-off p-GaN/AlGaN/GaN high-electron-mobility transistors [J] . M. Tapajna, O. Hilt, E. Bahat-Treidel, Applied Physics Letters . 2015,第19期

机译：常关型p-GaN / AlGaN / GaN高电子迁移率晶体管中栅二极管退化的研究
4. Electrical Characteristics of AlGaN-GaN High Electron Mobility Transistors and AlGaN Schottky Diodes Irradiated with Protons [C] . Yongkun Sin, Nathan Presser, Brendan Foran, Gallium nitride materials and devices IX . 2014

机译：质子辐照的AlGaN-GaN高电子迁移率晶体管和AlGaN肖特基二极管的电学特性
5. The Effects of Thermal, Strain, and Neutron Irradiation on Defect Formation in AlGaN/GaN High Electron Mobility Transistors and GaN Schottky Diodes [D] . Lin, Chung-Han 2013

机译：热，应变和中子辐照对AlGaN / GaN高电子迁移率晶体管和GaN肖特基二极管中缺陷形成的影响
6. Charging Effect by Fluorine-Treatment and Recess Gate for Enhancement-Mode on AlGaN/GaN High Electron Mobility Transistors [O] . Soo Cheol Kang, Hyun-Wook Jung, Sung-Jae Chang, 2020

机译：AlGaN / GaN高电子迁移率氟处理和凹槽通过氟处理和凹陷栅极充电效果
7. STUDY OF CMOS COMPATIBLE RUTHENIUM OXIDE SCHOTTKY CONTACTS FOR ALGAN/GAN AND INALN/GAN DIODES AND HIGH MOBILITY TRANSISTORS GROWN ON SILICON (111) SUBSTRATES [O] . LWIN MIN KYAW 2015

机译：硅（111）基质上的Algan / gan和Inaln / GAN二极管和高迁移率晶体管的CMOS相容氧化钌肖特基接触的研究

The impact of dislocations on AlGaN/GaN Schottky diodes and on gate failure of high electron mobility transistors

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