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Analytical model and simulation‐based analysis of a work function engineered triple metal tunnel field‐effect transistor device showing excellent device performance

机译：基于分析模型和基于仿真的工作函数工程三相金属隧道场效应晶体管器件，显示出优异的装置性能

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Ria Bose; Jatindra Nath Roy;
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年度 2020
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1. Compact 2D modeling and drain current performance analysis of a work function engineered double gate tunnel field effect transistor [J] . Sarkhel Saheli, Bagga Navjeet, Sarkar Subir Kumar Journal of Computational Electronics . 2016,第1期

机译：功函数工程双栅极隧道场效应晶体管的紧凑型2D建模和漏极电流性能分析
2. A predictive analytic model for high-performance tunneling field-effect transistors approaching non-equilibrium Green's function simulations [J] . Ramon B. Salazar, Hesameddin Ilatikhameneh, Rajib Rahman, Journal of Applied Physics . 2015,第16期

机译：接近非平衡格林函数仿真的高性能隧穿场效应晶体管的预测分析模型
3. Effective Work Function Engineering for Aggressively Scaled Planar and Multi-Gate Fin Field-Effect Transistor-Based Devices with High-k Last Replacement Metal Gate Technology [J] . Anabela Veloso, Soon Aik Chew, Yuichi Higuchi, Japanese journal of applied physics . 2013,第4Issue2期

机译：具有高k最后替代金属栅极技术的激进缩放平面和多栅极鳍式场效应晶体管器件的有效功函数工程
4. Characterization and Analysis of Two-dimensional Hydrogenated Nanocrystalline-diamond Metal Oxide Semiconductor Field Effect Transistor (MOSFET) using Different Surface Charge Models with Device Simulation [C] . A. Reem, A. Mohammed, Quang N. Nguyen, IEEE International Conference on Nanotechnology . 2020

机译：使用不同的表面电荷模型对二维氢化纳米晶金刚石金属氧化物半导体场效应晶体管（MOSFET）进行表征和分析，并进行器件仿真
5. Device modeling and circuit performance evaluation for nanoscale devices: Silicon technology beyond 45 nm node and carbon nanotube field effect transistors. [D] . Deng, Jie. 2007

机译：纳米器件的器件建模和电路性能评估：超过45 nm节点的硅技术和碳纳米管场效应晶体管。
6. Graphene-based lateral heterostructure transistors exhibit better intrinsic performance than graphene-based vertical transistors as post-CMOS devices [O] . Demetrio Logoteta, Gianluca Fiori, Giuseppe Iannaccone -1

机译：作为后CMOS器件基于石墨烯的横向异质结构晶体管表现出比基于石墨烯的垂直晶体管更好的固有性能
7. A Predictive Analytic Model for High-Performance Tunneling-Field Effect Transistors Approaching Non-Equilibrium Green's Function Simulations [O] . Salazar, Ramon B., Ilatikhameneh, Hesameddin, Rahman, Rajib, 2015

机译：高性能隧道效应的预测分析模型晶体管接近非平衡格林函数模拟

Analytical model and simulation‐based analysis of a work function engineered triple metal tunnel field‐effect transistor device showing excellent device performance

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