Assessment of InAs/AlGaSb Tunnel-FET Virtual Technology Platform for Low-Power Digital Circuits

摘要

In this work, a complementary InAs/Al0.05Ga0.95Sbudtunnel field-effect-transistor (TFET) virtual technology platformudis benchmarked against the projection to the CMOS FinFETud10-nm node, by means of device and basic circuit simulations.udThe comparison is performed in the ultralow voltage regimeud(below 500 mV), where the proposed III–V TFETs featureudON-current levels comparable to scaled FinFETs, for the sameudlow-operating-power OFF-current. Due to the asymmetricaludn- and p-type I–Vs, trends of noise margins and performancesudare investigated for different Wp/Wn ratios. Implications of theuddevice threshold voltage variability, which turned out to beuddramatic for steep slope TFETs, are also addressed.