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Manipulating the Ge Vacancies and Ge Precipitates through Cr Doping for Realizing the High‐Performance GeTe Thermoelectric Material

机译：通过CR掺杂来操纵GE空位和GE沉淀，以实现高性能GetE热电材料

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Jing Shuai; Yang Sun; Xiaojian Tan; Takao Mori;
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1. Realizing Improved Thermoelectric Performance in BiI3-Doped Sb2Te3(GeTe)(17) via Introducing Dual Vacancy Defects [J] . Xu Xiao, Huang Yi, Xie Lin, Chemistry of Materials: A Publication of the American Chemistry Society . 2020,第4期

机译：通过引入双空位缺陷来实现Bii3掺杂SB2TE3（GetE）（GetE）（GetE）（GetE）（17）中的改进的热电性能
2. Boosting the thermoelectric performance of GeTe by manipulating the phase transition temperature via Sb doping [J] . Jin Yang, Wang Dongyang, Qiu Yuting, Journal of Materials Chemistry, C. materials for optical and electronic devices . 2021,第20期

机译：通过SB掺杂操纵相变温度来提高Gete的热电性能
3. Origin of the High Performance in GeTe-Based Thermoelectric Materials upon Bi_2Te_3 Doping [J] . Di Wu, Li-Dong Zhao, Shiqiang Hao, Journal of the American Chemical Society . 2014,第32期

机译：Bi_2Te_3掺杂后基于GeTe的热电材料的高性能起源
4. Material and device performance of TiO2 doped GeTe for ruggedized memory applications [C] . Chua E.K., Li M.H., Lim K.G., IEEE International Conference on Electron Devices and Solid-State Circuits . 2015

机译：TiO2掺杂的GeTe的材料和器件性能，用于坚固的存储应用
5. The Effects of Doping and Processing on the Thermoelectric Properties of Platinum Diantimonide Based Materials for Cryogenic Peltier Cooling Applications [D] . Waldrop, Spencer Laine 2017

机译：低温珀尔帖冷却应用中掺杂和加工工艺对二锑化铂基材料热电性能的影响
6. Boosting the Thermoelectric Performance of Pseudo‐Layered Sb2Te3(GeTe)n via Vacancy Engineering [O] . Xiao Xu, Lin Xie, Qing Lou, 2018

机译：通过空缺工程提高伪层Sb2Te3（GeTe）n的热电性能
7. Realizing High Thermoelectric Performance in GeTe through Optimizing Ge Vacancies and Manipulating Ge Precipitates [O] . Yang Jin, Yu Xiao, Dongyang Wang, 2019

机译：通过优化GE空缺和操纵GE沉淀，实现Gete的高温性能

Manipulating the Ge Vacancies and Ge Precipitates through Cr Doping for Realizing the High‐Performance GeTe Thermoelectric Material

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