High voltage modulators based on solid-state elements for linacs (review)

摘要

The data on developing and creating high-voltage pulse modulators for linacs with using Insulator Gate BipolarudTransistors (IGBT) and Integrated Gate Commutate Thyristors (IGCT) are presented. Comparative analysis of mainudcharacteristics such as efficiency, reliability and cost are made for standard modulator and semiconductor high voltage sources with different scheme topology.