HIGH SPATIAL RESOLUTION ELECTRON BEAM INDUCED CURRENT

摘要

Spatial resolution δR, of the Electron Beam Induced Current (EBIC) contrast can be defined as the width at half maximum of the contrast profile accross a defect. It depends mainly on beam spreading, but in the case of grain boundaries (GBs), it is also very dependent on the minority carrier diffusion length L. In silicon with L = 100 µm for instance δR = 40 µm at 30 kV [l], value far too large to establish correlations with microstructure.