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Terahertz emission increase in GaAs films exhibiting structural defects grown on Si (100) substrates using a two-layered LTG-GaAs buffer system

机译：使用双层LTG-GAAS缓冲系统在Si（100）基板上表现出结构缺陷的GaAs膜的太赫兹发射增加

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Karl Cedric Gonzales; Elizabeth Ann Prieto; Gerald Angelo Catindig; Alexander De Los Reyes; Maria Angela Faustino; Mae Agatha Tumanguil-Quitoras; Horace Andrew Husay; John Daniel Vasquez; Armando Somintac; Elmer Estacio; Arnel Salvador;
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1. Terahertz emission increase in GaAs films exhibiting structural defects grown on Si (100) substrates using a two-layered LTG-GaAs buffer system [J] . Karl Cedric Gonzales, Elizabeth Ann Prieto, Gerald Angelo Catindig, Journal of materials science . 2021,第10期

机译：使用双层LTG-GAAS缓冲系统在Si（100）基板上具有结构缺陷的GaAs膜的太赫兹发射增加
2. Terahertz Emission from GaAs Films on Si(100) and Si (111) Substrates Grown by Molecular Beam Epitaxy [J] . Takashi Yoshioka, Satoru Takatori, Pham Hong Minh, Journal of Infrared, Millimeter and Terahertz Waves . 2011,第4期

机译：分子束外延生长的Si（100）和Si（111）衬底上的GaAs薄膜的太赫兹发射。
3. Terahertz Emission from GaAs Films on Si(100) and Si(111) Substrates Grown by Molecular Beam Epitaxy [J] . Takashi Yoshioka, Satoru Takatori, Pham Hong Minh, Journal of Infrared, Millimeter, and Terahertz Waves . 2011,第4期

机译：分子束外延生长的Si（100）和Si（111）衬底上GaAs薄膜的太赫兹发射
4. Intense terahertz emission from GaAs and InAs thin films grown on GaSb substrates [C] . Que C.T. Quantum Electronics Conference amp; Lasers and Electro-Optics (CLEO/IQEC/PACIFIC RIM), 2011 . 2011

机译：GaSb衬底上生长的GaAs和InAs薄膜的强烈太赫兹发射
5. Application of positron annihilation induced auger electron spectroscopy in measurements of interface defects and the stability of ultra-thin aluminum films grown on gallium arsenide(100) [D] . Chen, Wu-Chi 2000

机译：正电子an没螺旋钻电子光谱在砷化镓上生长的界面缺陷和超薄铝膜的稳定性测量中的应用（100）
6. High-Quality 100 nm Thick InSb Films Grown on GaAs(001)Substrates with an InxAl1–xSb Continuously Graded Buffer Layer [O] . Soo Seok Kang, Suk In Park, Sang Hoon Shin, 2018

机译：GaAs（001）上生长的高质量100 nm厚InSb膜具有InxAl1-xSb连续渐变缓冲层的基板
7. Terahertz Emission from GaAs and InAs Thin Films Grown on Si Substrates in the Transmission-geometry Optical Excitation [O] . ESTACIO Elmer, QUE Christopher T., YAMAMOTO Kohji, 2011

机译：在透射几何光学激发中在si衬底上生长的Gaas和Inas薄膜的太赫兹发射
8. Effects of Substrate Surface Treatments on the Defect Incorporation in Hydride VPE Grown InGaAs Films. [R] . 1984

机译：衬底表面处理对氢化物VpE生长InGaas薄膜缺陷掺入的影响。

Terahertz emission increase in GaAs films exhibiting structural defects grown on Si (100) substrates using a two-layered LTG-GaAs buffer system

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