首页> 外文OA文献 >Engineering of band gap states of amorphous SiZnSnO semiconductor as a function of Si doping concentration

【2h】

Engineering of band gap states of amorphous SiZnSnO semiconductor as a function of Si doping concentration

机译：无定形Siznsno半导体的带隙状态的带隙状态作为Si掺杂浓度的函数

代理获取

本网站仅为用户提供外文OA文献查询和代理获取服务，本网站没有原文。下单后我们将采用程序或人工为您竭诚获取高质量的原文，但由于OA文献来源多样且变更频繁，仍可能出现获取不到、文献不完整或与标题不符等情况，如果获取不到我们将提供退款服务。请知悉。

页面导航

著录项
引文网络
相似文献
相关主题

著录项

作者
Jun Young Choi; Keun Heo; Kyung-Sang Cho; Sung Woo Hwang; Sangsig Kim; Sang Yeol Lee;
展开▼
作者单位

展开▼
年度 2016
总页数
原文格式 PDF
正文语种
中图分类

相似文献

外文文献
中文文献
专利

1. Engineering of band gap states of amorphous SiZnSnO semiconductor as a function of Si doping concentration [J] . Jun Young Choi, Keun Heo, Kyung-Sang Cho, Scientific reports. . 2016,第4期

机译：无定形Siznsno半导体的带隙状态的带隙状态作为Si掺杂浓度的函数
2. Bandgap engineering of the amorphous wide bandgap semiconductor (SiC)_(1-x)(AlN)_x doped with terbium and its optical emission properties [J] . R. Weingaertner, J.A. Guerra Torres, O. Erlenbach, Materials Science and Engineering . 2010,第1a3期

机译：amorphous掺杂非晶宽带隙半导体（SiC）_（1-x）（AlN）_x的带隙工程及其光发射特性
3. Band gap and function engineering for novel functional alloy semiconductors: Bloomed as magnetic properties at room temperature with α-(GaFe)2O3 [J] . Kaneko Kentaro, Kakeya Itsuhiro, Komori Sachio, Journal of Applied Physics . 2013,第23期

机译：新型功能合金半导体的带隙和功能工程：在室温下以α-（GaFe）2O3的磁性能产生
4. The Influence of Nitrogen Doping Concentration on the Strain and Band Gap Energy of N-Doped Zinc Oxide Prepared Using Spray Coating Technique [C] . Heri Sutanto, Eko Hidayanto, Muhammad Irwanto, International conference on material and manufacturing technology . 2017

机译：氮掺杂浓度对喷涂技术制备N掺杂氧化锌的应变和带隙能的影响
5. Band-gap engineering of amorphous silicon-germanium alloys. [D] . Conde, Joao Pedro Rodrigues. 1989

机译：非晶硅锗合金的带隙工程。
6. Engineering of band gap states of amorphous SiZnSnO semiconductor as a function of Si doping concentration [O] . Jun Young Choi, Keun Heo, Kyung-Sang Cho, -1

机译：非晶SiZnSnO半导体带隙状态随Si掺杂浓度的变化
7. Accurate Band Gaps for Semiconductors from Density Functional Theory [O] . Xiao Hai, Tahir-Kheli Jamil, Goddard William A. III 2011

机译：基于密度泛函理论的半导体精确带隙
8. Some Physical Impurity Properties of Doped-Indirect Gap Semiconductors at Low and Intermediate Concentrations [R] . Fabbri, M., Perondi, L. F. 1985

机译：中低浓度掺杂间接间隙半导体的物理杂质特性

Engineering of band gap states of amorphous SiZnSnO semiconductor as a function of Si doping concentration

著录项

引文网络

相似文献

相关主题

期刊订阅