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Thin layer chromatographic separation of gallium, indium, thallium, zinc and cadmium as their diethyldithiocarbamate complexes

机译：镓，铟，铊，锌和镉作为其二乙基硫代氨基甲酸酯复合物的薄层色谱分离

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J. Rai; V. P. Kukreja;
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年度 1970
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1. Reference Data for the Density and Viscosity of Liquid Cadmium, Cobalt, Gallium, Indium, Mercury, Silicon, Thallium, and Zinc [J] . Assael M.J., Armyra I.J., Brillo J., Journal of Physical and Chemical Reference Data . 2012,第3期

机译：液态镉，钴，镓，铟，铟，汞，硅，T和锌的密度和粘度的参考数据
2. The effect of a zinc–tin-oxide layer used as an etch-stopper layer on the bias stress stability of solution-processed indium–gallium–zinc-oxide thin-film transistors [J] . Chul Ho Kim, You Seung Rim, Hyun Jae Kim Journal of Physics, D. Applied Physics: A Europhysics Journal . 2014,第38期

机译：氧化锌锡层用作腐蚀停止层对溶液处理的铟镓锌氧化锌薄膜晶体管的偏置应力稳定性的影响
3. Medium Frequency Physical Vapor Deposited Al2O3 and SiO2 as Etch-Stop-Layers for Amorphous Indium-Gallium-Zinc-Oxide Thin-Film-Transistors [J] . Nag Manoj, Bhoolokam Ajay, Steudel Soeren, ECS Journal of Solid State Science and Technology . 2015,第5期

机译：中频物理气相沉积Al2O3和SiO2作为非晶铟镓镓锌氧化物薄膜晶体管的刻蚀停止层
4. Dynamic Threshold Voltage Modulation in Double-Gate Indium-Gallium-Zinc Oxide Thin-Film Transistors: Influence of the Active Layer Thickness [C] . Yang Shao, Hongjuan Lu, Xiaoliang Zhou, IEEE International Conference on Electron Devices and Solid State Circuits . 2018

机译：双栅极铟镓镓锌氧化物薄膜晶体管中的动态阈值电压调制：有源层厚度的影响
5. THE SOLVENT EXTRACTION AND FLUOROMETRIC ANALYSIS OF THE 8-MERCAPTOQUINOLATES OF ZINC, INDIUM, GALLIUM, CADMIUM, AND THALLIUM (I). [D] . DAVIS, RAYMOND ALFONSO. 1966

机译：锌，铟，镓，镉和TH的八巯基甲磺酸盐的溶剂萃取和荧光分析（I）。
6. Remote Doping Effects of Indium–Gallium–Zinc Oxide Thin-Film Transistors by Silane-Based Self-Assembled Monolayers [O] . Juhyung Seo, Hocheon Yoo 2021

机译：基于硅烷的自组装单层氧化铟 - 氧化锌薄膜晶体管的远程掺杂效应
7. Medium Frequency Physical Vapor Deposited AI203 and SiO2 as Etch-Stop-Layers for Amorphous Indium-Gallium-Zinc-Oxide Thin-Film-Transistors [O] . Nag Manoj, Bhoolokam Ajay Sampath, Steudel Soeren, 2015

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Thin layer chromatographic separation of gallium, indium, thallium, zinc and cadmium as their diethyldithiocarbamate complexes

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