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Electron and Proton Radiation Effects on Band Structure and Carrier Dynamics in MBE and MOCVD Grown III-V Test Structures

机译：电子和质子辐射对MBE和MoCVD中的带结构和载波动力学的影响，生长III-V试验结构

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Andrew Hudson; Adam Scofield; William Lotshaw; Seth Hubbard; Michael Slocum; Baolai Liang; Mukul C. Debnath; Bor-Chau Juang; Diana L. Huffaker;
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1. Response properties of III-V dilute magnetic semiconductors including disorder, dynamical electron-electron interactions, and band structure effects [J] . F. V. Kyrychenko, C. A. Ullrich Physical review . 2011,第20期

机译：III-V稀磁半导体的响应特性包括无序，动态电子-电子相互作用和能带结构效应
2. Effects of proton irradiation on luminescence emission and carrier dynamics of self-assembled III-V quantum dots [J] . Leon R., Marcinkecius S., Siegert J., IEEE Transactions on Nuclear Science . 2002,第6期

机译：质子辐照对自组装III-V量子点的发光发射和载流子动力学的影响
3. Effects of Carrier Gas on the Properties of InGaN/GaN Quantum Well Structures Grown by MOCVD [J] . N. Duxbury, P. Dawson, U. Bangert, Physica status solidi, B. Basic research . 1999,第1期

机译：载气对MOCVD生长的InGaN / GaN量子阱结构性能的影响
4. Electron and Proton Radiation Effects on Band Structure and Carrier Dynamics in MBE and MOCVD Grown III-V Test Structures [C] . Andrew Hudson, Adam Scofield, William Lotshaw, World Conference on Photovoltaic Energy Conversion;European Photovoltaic Solar Energy Conference;Photovoltaic Science and Engineering Conference;IEEE Photovoltaic Specialist Conference . 2018

机译：电子和质子辐射对MBE和MOCVD生长的III-V测试结构中的能带结构和载流子动力学的影响
5. Investigation of the Effects of Rapid Thermal Annealing on MBE Grown GaAsBi/GaAs Heterostructures for Optoelectronic Devices. [D] . Grant, Perry C. 2013

机译：快速热退火对MBE生长的光电器件GaAsBi / GaAs异质结构影响的研究。
6. Photoluminescence and Band Alignment of Strained GaAsSb/GaAs QW Structures Grown by MBE on GaAs [O] . Yuri G. Sadofyev, Nigamananda Samal 2010

机译：MBE在GaAs上生长的应变GaAsSb / GaAs QW结构的光致发光和能带排列
7. Response properties of III-V dilute magnetic semiconductors: interplay of disorder, dynamical electron-electron interactions and band-structure effects [O] . Kyrychenko, F. V., Ullrich, C. A. 2011

机译：III-V稀磁半导体的响应特性：相互作用无序，动态电子 - 电子相互作用和带结构效果
8. Effects of electron and proton irradiations on n/p and p/n GaAs cells grown by MOCVD [R] . Weinberg, Irving, Swartz, Clifford K., Hart, Russell E., Jr. 1987

机译：电子和质子辐照对mOCVD生长的n / p和p / n Gaas细胞的影响

Electron and Proton Radiation Effects on Band Structure and Carrier Dynamics in MBE and MOCVD Grown III-V Test Structures

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