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Effect of low thermal budget annealing on surface passivation of silicon by ALD based aluminum oxide films

机译：低热预算退火对基于ALD基氧化铝膜表面钝化的影响

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Vandana Vandana; Neha Batra; Jhuma Gope; Rajbir Singh; Jagannath Panigrahi; Sanjay Tyagi; P. Pathi; S. K. Srivastava; C. M. S. Rauthan; P. K. Singh;
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1. Effect of low thermal budget annealing on surface passivation of silicon by ALD based aluminum oxide films [J] . Vandana, Neha Batra, Jhuma Gope Physical chemistry chemical physics: PCCP . 2014,第39期

机译：低热预算退火对基于ALD基氧化铝膜表面钝化的影响
2. Negatively charged silicon nitride films for improved p-type silicon surface passivation by low-temperature rapid thermal annealing [J] . Wang Peng, Jin Shangjie, Lu Tao, Journal of Physics, D. Applied Physics: A Europhysics Journal . 2019,第34期

机译：带负电荷的氮化硅膜，用于通过低温快速热退火改善P型硅表面钝化
3. Smoothing, passivation and re-passivation f silicon surfaces by anodic oxidation: a low thermal budget process [J] . J. Rappich Microelectronics & Reliability . 2000,第4a5期

机译：通过阳极氧化对硅表面进行平滑，钝化和再钝化：低热预算工艺
4. Comparison between aluminum oxide surface passivation films deposited with thermal ALD, plasma ALD and PECVD [C] . Dingemans G., Engelhart P., Seguin R., 35th IEEE Photovoltaic Specialists Conference . 2010

机译：热ALD，等离子ALD和PECVD沉积的氧化铝表面钝化膜的比较
5. Thermal stability of strontium iron oxide/silicon dioxide/silicon and strontium iron oxide/aluminum oxide thin film systems: Transmission electron microscopy study of interfacial structures of the thin film systems and conductometric sensing response of strontium iron oxide/aluminum oxide. [D] . Wang, Dashan. 2008

机译：氧化锶铁/二氧化硅/硅和氧化锶铁/氧化铝薄膜系统的热稳定性：透射电子显微镜研究薄膜系统的界面结构和氧化锶铁/氧化铝的电导传感响应。
6. Passivation mechanism of thermal atomic layer-deposited Al2O3 films on silicon at different annealing temperatures [O] . Yan Zhao, Chunlan Zhou, Xiang Zhang, 2013

机译：不同退火温度下硅上热原子层沉积Al2O3膜的钝化机理
7. Effect of low thermal budget annealing on surface passivation of silicon by ALD based aluminum oxide filmsud [O] . - Vandana, Batra Neha, Gope Jhuma, 2014

机译：低热预算退火对aLD基氧化铝薄膜表面钝化的影响 ud
8. Effective passivation of the low resistivity silicon surface by a rapid thermal oxide/PECVD silicon nitride stack and its application to passivated rear and bifacial Si solar cells [R] . Rohatgi, A. , Narasimha, S. , Ruby, D. S. 1998

机译：通过快速热氧化物/ pECVD氮化硅叠层有效钝化低电阻率硅表面及其在钝化后部和双面si太阳能电池中的应用

Effect of low thermal budget annealing on surface passivation of silicon by ALD based aluminum oxide films

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