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Annealing-Dependent Breakdown Voltage and Capacitance of Gallium Oxide-Based Gallium Nitride MOSOM Varactors

机译：富含氧化氧化镓基氮化镓弹出器变容二抗移位的退火依赖性击穿电压和电容

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Yu-Li Hsieh; Liann-Be Chang; Ming-Jer Jeng; Chung-Yi Li; Chien-Fu Shih; Hung-Tsung Wang; Zi-Xin Ding; Chia-Ning Chang; Hao-Zong Lo; Yuan-Po Chiang;
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4. Defect-induced optical breakdown in aluminum nitride and gallium nitride epitaxial films [C] . Jae-Hyuck Yoo, Andrew P. Lange, Selim Elhadj Conference on wide bandgap power devices and applications . 2017

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5. Determination of carrier concentration in gallium nitride/aluminum gallium nitride nanostructures using electrochemical capacitance-voltage profiling [D] . Muddasani, Avinash 2007

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机译：富含镓的砷化镓，磷化镓和氮化镓表面的非均相有机反应。

Annealing-Dependent Breakdown Voltage and Capacitance of Gallium Oxide-Based Gallium Nitride MOSOM Varactors

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