首页> 外文OA文献 >Improvement in Bias Stability of IGZO TFT With Etching Stop Structure by UV Irradiation Treatment of Active Layer Island

【2h】

Improvement in Bias Stability of IGZO TFT With Etching Stop Structure by UV Irradiation Treatment of Active Layer Island

机译：用紫外线照射治疗活性层岛的蚀刻停止结构的IGZO TFT偏置稳定性的提高

代理获取

本网站仅为用户提供外文OA文献查询和代理获取服务，本网站没有原文。下单后我们将采用程序或人工为您竭诚获取高质量的原文，但由于OA文献来源多样且变更频繁，仍可能出现获取不到、文献不完整或与标题不符等情况，如果获取不到我们将提供退款服务。请知悉。

页面导航

著录项
引文网络
相似文献
相关主题

著录项

作者
Cheng-Chao Pan; Shi-Bo Yang; Long-Long Chen; Ji-Feng Shi; Xiang Sun; Xi-Feng Li; Jian-Hua Zhang;
展开▼
作者单位

展开▼
年度 2020
总页数
原文格式 PDF
正文语种
中图分类

相似文献

外文文献
中文文献
专利

1. Improvement of the positive bias stability of a-IGZO TFTs by the HCN treatment [J] . Kim Myeong-Ho, Choi Myung-Jea, Kimura Katsuya, Solid-State Electronics . 2016,第deca期

机译：通过HCN处理改善a-IGZO TFT的正偏压稳定性
2. Improved Electrical Performance and Bias Stability of Solution-Processed Active Bilayer Structure of Indium Zinc Oxide based TFT [J] . Jin-Suk Seo, Byeong-Soo Bae ACS applied materials & interfaces . 2014,第17期

机译：铟锌氧化物基TFT的固溶有源双层结构的改善的电性能和偏置稳定性
3. Dual Active Layer Structure of Nitrogen Doped Amorphous InSnZnO Thin-Film Transistors for Negative Gate Bias Stability Improvement [J] . GongTan Li, Bo-Ru Yang, Chuan Liu, SID International Symposium: Digest of Technology Papers . 2016,第3期

机译：氮掺杂非晶InSnZnO薄膜晶体管的双有源层结构，可改善负栅极偏置稳定性
4. Photo-Current Response and Negative Bias Stability Under Light Irradiation in IGZO-TFT [C] . Masashi Tsubuku, Takayuki Inoue, Masahiro Takahashi, IDW '10;International display workshops . 2011

机译：IGZO-TFT中光辐照下的光电流响应和负偏置稳定性
5. A Study on Copper-gate Integration with Titanium Interface Layers for IGZO TFTs [D] . Sethupathi, Harithshanmaa . 2019

机译：用于IGZO TFT的钛界面层铜门集成研究
6. Significant Performance and Stability Improvements of Low-Temperature IGZO TFTs by the Formation of In-F Nanoparticles on an SiO2 Buffer Layer [O] . Ho-young Jeong, Seung-hee Nam, Kwon-shik Park, 2020

机译：通过在SiO2缓冲层上形成In-F纳米粒子可显着降低低温IGZO TFT的性能和稳定性
7. Dual active layer a-IGZO TFT via homogeneous conductive layer formation by photochemical H-doping [O] . 2014

机译：通过光化学H掺杂形成均质导电层的双有源层a-IGZO TFT
8. Preliminary Study to Develop a Data Acquistion System to Monitor Strains at theBottom Layers of Flexible Pavement Structures in Rhode Island. Estimation of Layer Coefficients for Design of Flexible Pavement Structures in Rhode Island [R] . Lee, K. W., Marcus, A. S., Thakur, V. M. 1994

机译：罗德岛柔性路面结构底层应变数据采集系统的初步研究。罗德岛柔性路面结构设计层系数的估算

Improvement in Bias Stability of IGZO TFT With Etching Stop Structure by UV Irradiation Treatment of Active Layer Island

著录项

引文网络

相似文献

相关主题

期刊订阅