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X-ray characterization of Ge dots epitaxially grown on nanostructured Si islands on silicon-on-insulator substrates

机译：在绝缘体衬里纳米结构上外延生长的GE点X射线特征

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Peter Zaumseil; Grzegorz Kozlowski; Yuji Yamamoto; Markus Andreas Schubert; Thomas Schroeder;
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1. X-ray characterization of Ge dots epitaxially grown on nanostructured Si islands on silicon-on-insulator substrates [J] . Zaumseil P., Kozlowski G., Yamamoto Y., Journal of Applied Crystallography . 2013,第4期

机译：在绝缘体上硅衬底上的纳米结构Si岛上外延生长的Ge点的X射线表征
2. X-ray characterization of Ge epitaxially grown on nanostructured Si(001) wafers [J] . P. Zaumseil, Y. Yamamoto, A. Bauer, Journal of Applied Physics . 2011,第2期

机译：纳米结构Si（001）晶片上外延生长的Ge的X射线表征
3. Structural investigations of SiGe epitaxial layers grown by molecular beam epitaxy on Si(001) and Ge(001) substrates: Ⅰ-High-resolution x-ray diffraction and x-ray topography [J] . N. Faleev, N. Sustersic, N. Bhargava, Journal of Crystal Growth . 2013,第FEBa15期

机译：通过分子束外延在Si（001）和Ge（001）衬底上生长的SiGe外延层的结构研究：Ⅰ-高分辨率x射线衍射和x射线形貌
4. Reduction of Structural Defects in Ge Epitaxially Grown on Nano-structured Si Islands on SOI Substrate [C] . P. Zaumseil, Y. Yamamoto, M. A. Schubert, Internationalonference on Gettering and Defect Engineering in Semiconductor Technology . 2014

机译：在SOI底物上纳米结构Si岛上外延生长的GE外延生长的结构缺陷
5. Characterization and nanopatterning of functional organics on hydrogen-terminated silicon(111) and epitaxially grown graphene substrates. [D] . Kellar, Joshua A. 2009

机译：氢封端的硅（111）和外延生长的石墨烯基板上功能有机物的表征和纳米图案化。
6. X-ray characterization of Ge dots epitaxially grown on nanostructured Si islands on silicon-on-insulator substrates [O] . Peter Zaumseil, Grzegorz Kozlowski, Yuji Yamamoto, -1

机译：在绝缘体上硅衬底上的纳米结构Si岛上外延生长的Ge点的X射线表征
7. Self-organization and Self-repair of a Two-dimensional Nanoarray of Ge Quantum Dots Epitaxially Grown on Si Substrates using Ultrathin SiO2 Films [O] . Yoshiaki NAKAMURA, Akiyuki MURAYAMA, Ryoko WATANABE, 2010

机译：使用超薄SiO2薄膜在Si衬底上外延生长的GE量子点二维纳米阵列的自组织和自修复
8. Low-Dislocation-Density GaAs Epilayers Grown on Ge-Coated Si Substrates by Means of Lateral Epitaxial Overgrowth. [R] . Tsaur, B. Y., McClelland, R. W., Fan, J. C. C., 1982

机译：通过横向外延过度生长在Ge涂层si衬底上生长的低位错密度Gaas外延层。

X-ray characterization of Ge dots epitaxially grown on nanostructured Si islands on silicon-on-insulator substrates

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