首页> 外文OA文献 >Superconducting Properties and Phase Diagram of Indirectly Electron-Doped $(hbox{Sr}_{1 - x}hbox{La}_{x})hbox{Fe}_{2}hbox{As}_{2}$ Epitaxial Films Grown by Pulsed Laser Deposition
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Superconducting Properties and Phase Diagram of Indirectly Electron-Doped $(hbox{Sr}_{1 - x}hbox{La}_{x})hbox{Fe}_{2}hbox{As}_{2}$ Epitaxial Films Grown by Pulsed Laser Deposition

机译:间接电子掺杂$( hbox {sr} _ {1 - x} hbox {la} _ {x}) hbox {fe} _ {2} hbox {are} _ {2以脉冲激光沉积产生的$外延薄膜

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摘要

A non-equilibrium phase (Sr1-xLax)Fe2As2 was formed by epitaxial film-growth.The resulting films emerged superconductivity along with suppression of theresistivity anomaly that is associated with magnetic and structural phasetransitions. The maximum critical temperature was 20.8 K, which is almost thesame as that of directly electron-doped Sr(Fe1-xCox)2As2. Its electronic phasediagram is much similar to that of Sr(Fe1-xCox)2As2, indicating that thedifference in the electron doping sites does not influence the superconductingproperties of 122-type SrFe2As2.
机译:通过外延膜生长形成非平衡相(SR1-Xlax)Fe2As2。所得膜的出现超导膜以及抑制与磁性和结构缩放相关的过异常。最大临界温度为20.8 k,这几乎是直接电子掺杂的Sr(Fe1-Xcox)2as2的Chesame。其电子脱位图与SR(Fe1-XCOX)2A2的电子脱位率类似,表明电子掺杂部位中的终点不会影响122型SRFE2AS2的超导效果。

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