Short-wavelength photoluminescence and electroluminescence in Ga(Al)P/GaP staggered type II quantum wells

摘要

Photoluminescence spectra of tailored Ga(A1)P/GaP quantum well heterostructures exhibit strong short-wavelength peaks at 363, 560, and 600−700 nm. The peak at 560 nm seems to originate from a no-phonon transition. All the transitions are observed up to 200 K. Light emitting diodes made with the same heterostructure predominently emit 560 nm light (green) with a background of 700 nm (red) at room temperature under cw operation. © 1997 American Institute of Physics.