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In Situ Cleaning and Fluorination of Black Phosphorus for Enhanced Performance of Transistors with High Stability

机译：原位清洁和黑色磷的氟化，提高具有高稳定性晶体管的性能

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1. In Situ Cleaning and Fluorination of Black Phosphorus for Enhanced Performance of Transistors with High Stability [J] . Hsieh Yu-Ling, Su Wen-Hsuan, Huang Cheng-Chun, ACS applied materials & interfaces . 2020,第33期

机译：原位清洗和黑色磷的氟化，提高具有高稳定性晶体管的性能
2. Metal-Ion-Modified Black Phosphorus with Enhanced Stability and Transistor Performance [J] . Guo Zhinan, Chen Si, Wang Zhongzheng, Advanced Materials . 2017,第42期

机译：金属离子改性的黑色磷具有增强的稳定性和晶体管性能
3. Quantum Dots: Fluorination‐Enhanced Ambient Stability and Electronic Tolerance of Black Phosphorus Quantum Dots (Adv. Sci. 9/2018) [J] . Xian Tang, Hong Chen, Joice Sophia Ponraj, Advanced Science . 2018,第9期

机译：量子点：黑色磷量子点的氟化增强的环境稳定性和电子耐受性（Adv。Sci.9 / 2018）
4. Black phosphorus transistors with enhanced hole transport and subthreshold swing using ultra-thin HfO2 high-k gate dielectric [C] . Zhi-Peng Ling, Xuewei Feng, He Jiang, IEEE Silicon Nanoelectronics Workshop . 2016

机译：使用超薄HfO2高k栅极电介质增强空穴传输和亚阈值摆幅的黑磷晶体管
5. Mechanisms of the System and Performance Stability in Enhanced Biological Phosphorus Removal (EBPR) Process -Insights from Functionally Relevant Microbial Populations and Intracellular Polymers Dynamics. [D] . Majed, Nehreen. 2011

机译：增强型生物除磷（EBPR）过程中系统的机制和性能稳定性-从功能相关的微生物种群和细胞内聚合物动力学的角度出发。
6. Quantum Dots: Fluorination‐Enhanced Ambient Stability and Electronic Tolerance of Black Phosphorus Quantum Dots (Adv. Sci. 9/2018) [O] . Xian Tang, Hong Chen, Joice Sophia Ponraj, 2018

机译：量子点：黑色磷量子点的氟化增强的环境稳定性和电子耐受性（Adv。Sci.9 / 2018）
7. Impact of ex-situ and in-situ cleans on the performance of bipolar transistors with low thermal budget in-situ phosphorus doped polysilicon emitter contacts [O] . Rahim A I A, Marsh C D, Ashburn P, 2001

机译：非原位和原位清洗对具有低热预算的原位磷掺杂多晶硅发射极触点的双极晶体管性能的影响

In Situ Cleaning and Fluorination of Black Phosphorus for Enhanced Performance of Transistors with High Stability

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