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P-Channel InGaN/GaN heterostructure metal-oxide-semiconductor field effect transistor based on polarization-induced two-dimensional hole gas

机译：P沟道Ingan / GaN异质结构金属氧化物半导体场效应晶体管基于极化诱导的二维空气气体

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Kexiong Zhang; Masatomo Sumiya; Meiyong Liao; Yasuo Koide; Liwen Sang;
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1. P-Channel InGaN/GaN heterostructure metal-oxide-semiconductor field effect transistor based on polarization-induced two-dimensional hole gas [J] . Kexiong Zhang, Masatomo Sumiya, Meiyong Liao, Scientific reports. . 2016,第1期

机译：P沟道Ingan / GaN异质结构金属氧化物半导体场效应晶体管基于极化诱导的二维空气气体
2. Fabrication of p-channel heterostructure field effect transistors with polarization-induced two-dimensional hole gases at metal–polar GaN/AlInGaN interfaces [J] . B Reuters, H Hahn, A Pooth, Journal of Physics, D. Applied Physics: A Europhysics Journal . 2014,第17期

机译：在金属-极性GaN / AlInGaN界面上用极化感应的二维空穴气体制造p沟道异质结构场效应晶体管
3. Enhancement-mode n-GaN gate p-channel heterostructure field effect transistors based on GaN/AIGaN 2D hole gas [J] . Chen Fu, Hao Ronghui, Yu Guohao, Applied Physics Letters . 2019,第11期

机译：基于GaN / AIGaN 2D空穴气体的增强型n-GaN栅极p沟道异质结构场效应晶体管
4. Investigation for the Formation of Polarization-Induced Two-Dimensional Electron Gas in AlGaN/GaN Heterostructure Field Effect Transistors [C] . H. W. JANG, C. M. JEON, K. H. KIM, Fourth International Conference on Nitride Semiconductors . 2002

机译：AlGaN / GaN异质结构场效应晶体管中极化诱导二维电子气形成的研究
5. Modeling and characterization of gallium nitride based metal-oxide-semiconductor heterostructure field-effect transistors for RF power amplifiers. [D] . Deng, Jie. 2009

机译：用于射频功率放大器的基于氮化镓的金属氧化物半导体异质结构场效应晶体管的建模与表征。
6. P-Channel InGaN/GaN heterostructure metal-oxide-semiconductor field effect transistor based on polarization-induced two-dimensional hole gas [O] . Kexiong Zhang, Masatomo Sumiya, Meiyong Liao, -1

机译：基于极化诱导的二维空穴气的P沟道InGaN / GaN异质结构金属氧化物半导体场效应晶体管
7. Comparative study of electroabsorption in InGaN/GaN quantum zigzag heterostructures with polarization-induced electric fields [O] . Sari, E., Ozel, T., Koc, A., 2008

机译：极化诱导电场在InGaN / GaN量子之字形异质结构中电吸收的比较研究

P-Channel InGaN/GaN heterostructure metal-oxide-semiconductor field effect transistor based on polarization-induced two-dimensional hole gas

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