We theoretically investigate a two-dimensional heterostructure composed of atopological insulator (TI) and a Mott insulator (MI), and clarify what kind ofelectronic states can be realized at the interface. By using inhomogeneousdynamical mean-field theory, we confirm that the topological edge statepenetrating into the MI region induces a heavy-fermion like mid-gap state. Wefurther elucidate the nature of the spatially-modulated quasi-particle weightof the mid-gap state, and discuss the effects of local correlation in the TIregion. The optical conductivity and the Drude weight are also computed withchanging the electron tunneling near the interface.
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