CdSxSe1-x nanocrystals grown from solid solution in silicate glass. Structural and interfacial aspects. High resolution transmission electron microscopy and optical absorption spectroscopy

摘要

CdS0.4Se0.6 nanocrystals have been formed through nucleation and growth processes during heat treatments at different temperatures (T = 600, 675 and 700°C) and annealing times (t = 1 hour to 8 days). A regime of nucleation and growth seems to occur at T = 600°C. The growth process is dominant at T = 675 and 700°C. The average size of the semiconductor particles ranges between 2 and 15 nm according to the temperature and annealing time. Structural and interfacial aspects of the particles at early stages of the growth are presented here.